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| PD - 95287A IRF7492PBF HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C dv/dt TJ TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 200 20 3.7 3.0 30 2.5 0.02 9.5 -55 to + 150 300 (1.6mm from case ) Units V V A W W/C V/ns C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W Notes through are on page 8 www.irf.com 1 02/23/07 IRF7492PBF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage BV(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 2.5 --- --- --- --- Typ. --- 0.20 64 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 79 m VGS = 10V, ID = 2.2A --- V VDS = VGS, ID = 250A 10 VDS = 160V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 7.9 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 39 9.2 15 15 13 27 14 1820 190 94 780 89 150 Max. Units Conditions --- S VDS = 50V, ID = 3.7A 59 ID = 2.2A --- nC VDS = 100V --- VGS = 10V --- VDD = 100V --- ID = 2.2A ns --- RG = 6.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 130 4.4 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 69 200 2.3 A 30 1.3 100 310 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V TJ = 25C, IF = 2.2A di/dt = 100A/s D S 2 www.irf.com IRF7492PBF 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 1 BOTTOM 10 BOTTOM 5.5V 1 0.1 5.5V 0.01 0.001 0.1 1 20s PULSE WIDTH Tj = 25C 0.1 20s PULSE WIDTH Tj = 150C 0.1 1 10 100 1000 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 3.0 I D = 3.7A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () 2.5 10.00 T J = 150C 2.0 T J = 25C 1.00 1.5 1.0 0.10 4.0 5.0 VDS = 50V 20s PULSE WIDTH 6.0 7.0 8.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 10V 120 140 160 VGS, Gate-to-Source Voltage (V) Tj, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7492PBF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = C + C ds gd 12 VGS, Gate-to-Source Voltage (V) ID= 2.2A 10 8 6 4 2 0 VDS= 160V VDS= 100V VDS= 40V 10000 C, Capacitance(pF) Ciss 1000 100 Coss Crss 10 1 10 100 1000 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain-to-Source Current (A) I SD , Reverse Drain Current (A) 10 10 100sec TJ = 150 C 1 TJ = 25 C 1 1msec Tc = 25C Tj = 150C Single Pulse 1 10 100 0.1 0.2 0.4 0.6 V GS = 0 V 0.8 1.0 0.1 10msec 1000 V SD,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7492PBF 4.0 VDS VGS 3.0 RD RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + ID , Drain Current (A) -V DD 2.0 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 10 0.20 0.10 Thermal Response 0.05 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.0001 0.001 0.01 0.1 1 t1/ t 2 +T A 100 1000 J = P DM x Z thJA 0.02 1 0.01 10 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7492PBF RDS(on) , Drain-to -Source On Resistance (m) RDS (on) , Drain-to-Source On Resistance (m ) 100 90 80 VGS = 10V 70 60 50 40 0 5 10 15 20 25 30 ID , Drain Current (A) 500 400 300 200 ID = 3.7A 100 0 5 6 7 8 9 10 11 12 13 14 15 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 300 VG VGS 3mA TOP Charge IG ID 250 BOTTOM ID 2.0A 3.5A 4.4A Current Sampling Resistors EAS , Single Pulse Avalanche Energy (mJ) 200 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 150 100 15V V(BR)DSS tp VDS L DRIVER 50 RG 20V D.U.T IAS + V - DD 0 25 50 75 100 125 150 A I AS tp 0.01 Starting Tj, Junction Temperature ( C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7492PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255] F OOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7492PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time ISD 2.2A, di/dt 210A/s, VDD V(BR)DSS, TJ 150C. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25C, L = 14mH RG = 25, IAS = 4.4A. Pulse width 400s; duty cycle 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2007 8 www.irf.com |
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